==Gintech Energy Corporation==

	1.Texturing After the incoming inspection of silicon wafers, any saw damage of such silicon wafers is removed at this stage, and then the surface is etched by acid to form a rough texture, which helps lower the reflectance of sunlight in order to capture as much sunlight as possible.
	2.Diffusion, forming the PN junction The diffusion process is preformed in a tube-type furnace with gaseous POCl3. Phosphorus is diffused into the surface of P-type silicon wafers, forming an “electron rich” N-type layer in the “hole rich” P-type silicon wafer, which creates the P-N junction, an essential role for photovoltaic effect.
	3.Phosphorus glass etching During the diffusion process, a layer of phosphorous glass is also formed onto the entire surface of silicon wafers, which have to be removed by hydrofluoric acid before the next production process.
	4.PECVD process : Anti-reflective coating The surface of silicon wafers are coated with the Anti-reflective coating made out of silicon nitride, deposited by the PECVD technique whereby silane and ammonia is reacted in a furnace. The major color of coating looks blue, but. the color could also look like purple blue or light blue due to different thickness of coating.
	5.Screen printing, 1 station for front side, 2 stations for back side The electrodes in the front side and back side of silicon wafers are printed by screen printing technique. This process is done by three stations；the first station is to print the front side bus-bar and finger with silver paste, the second is to print back side bus-bar with silver/aluminum paste, and the third is to print all the rest of the back side with aluminum paste. Each station needs the wafers inspected by optical analysis system in order to make sure of the correct alignment of printing patterns.
	6.Fast firing, metallization The printed and dried metal pastes on the surface of silicon wafers will be able to conduct electricity after firing process. Silicon wafers go through belt-type fast firing furnace, and then the metals on the surface of silicon wafers penetrate into the front side silicon nitride coating, diffuse into the silicon wafers, and get good adhesion to conduct electricity. The setting parameter of firing process influences cell efficiency, solderability and soldering strength of bus-bar.
	7.Laser edge isolation The front side of the solar cell made out of the P-type silicon wafer is negative pole(-), and the back side is positive pole(+). To avoid short circuit at the cell edge, a laser beam is used to cut along the edge, making a groove deeper than the P-N junction. This task can be done also by plasma etching or chemical etching after the diffusion process.
	8.Testing and sorting, standard cells calibrated by Fraunhofer ISE in Germany The optical properties and electrical data of all solar cells are inspected and measured by automatic system, and then all the solar cells are sorted into different classes by our product definition.. Standard solar cells for electrical data are regularly calibrated by Fraunhofer ISE, Germany, to ensure the power class accuracy of all the solar cells.